Neutron dosimeters employing high-efficiency perforated semiconductor detectors
- 1. Department of Mechanical and Nuclear Engineering, Kansas State University, 302 Rathbone Hall, Manhattan, KS 66506 (United States)
Description
A technology that makes use of recently developed high-efficiency, low-power semiconductor detectors for neutron dosimetry is described. Silicon semiconductor material is perforated using plasma etching techniques; the surface is then coated and the perforations are filled with neutron reactive material. These perforated detectors appear to be capable of greater than 40% efficiency when used in a sandwich design. Devices incorporating bare and cadmium-filtered perforated semiconductor detectors with micro-controller hardware to process and readout the detectors can be made small enough to function as portable neutron dosimeters. Monte Carlo modeling that relates the detector responses to phantom dose equivalent at various positions on an elliptical water phantom is discussed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2007.04.273Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.04.273;
- PII
- S0168-583X(07)00852-X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 263
- Journal Issue
- 1
- Journal Page Range
- p. 183-185
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 6. topical meeting on industrial radiation and radioisotope measurement applications
- Dates
- 20-24 Jun 2005
- Place
- Hamilton, ON (Canada)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39049199
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM; COMPUTERIZED SIMULATION; DESIGN; DOSE EQUIVALENTS; DOSEMETERS; EFFICIENCY; ETCHING; MONTE CARLO METHOD; NEUTRON DOSIMETRY; NEUTRONS; PERFORATION; PHANTOMS; PLASMA; READOUT SYSTEMS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; WATER
- Descriptors DEC
- BARYONS; CALCULATION METHODS; DOSIMETRY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; HYDROGEN COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; METALS; MOCKUP; NUCLEONS; OXYGEN COMPOUNDS; RADIATION DETECTORS; SEMIMETALS; SIMULATION; STRUCTURAL MODELS; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.