Published September 1997
| Version v1
Journal article
Speckle in coherent x-ray reflectivity from Si(111) wafers
- 1. Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)
- 2. Bell Laboratories/Lucent Technologies, Murray Hill, New Jersey 07974-0636 (United States)
- 3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)
Description
We report the observation of x-ray speckle in the reflected beam from Si(111) wafers illuminated at grazing incidence. An intense coherent 8-keV x-ray beam was prepared using a wiggler source and multilayer monochromator optics. We demonstrate that the speckle patterns are specific to the region of the sample that is illuminated. From the trade-off between surface sensitivity and signal as a function of perpendicular momentum transfer, we infer that the speckle is due to the surface morphology on a micrometer length scale. We document and explain the evolution of the speckle patterns from nearly specular at low qz to highly structured at larger qz. copyright 1997 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 56
- Journal Issue
- 11
- Journal Page Range
- p. 6454-6457
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30006226
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- MORPHOLOGY; NSLS; REFLECTIVITY; ROUGHNESS; SILICON; SURFACES; SYNCHROTRON RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; ELEMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION SOURCES; RADIATIONS; SEMIMETALS; SPECTROSCOPY; SURFACE PROPERTIES; SYNCHROTRON RADIATION SOURCES