Published September 1997 | Version v1
Journal article

Speckle in coherent x-ray reflectivity from Si(111) wafers

  • 1. Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)
  • 2. Bell Laboratories/Lucent Technologies, Murray Hill, New Jersey 07974-0636 (United States)
  • 3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)

Description

We report the observation of x-ray speckle in the reflected beam from Si(111) wafers illuminated at grazing incidence. An intense coherent 8-keV x-ray beam was prepared using a wiggler source and multilayer monochromator optics. We demonstrate that the speckle patterns are specific to the region of the sample that is illuminated. From the trade-off between surface sensitivity and signal as a function of perpendicular momentum transfer, we infer that the speckle is due to the surface morphology on a micrometer length scale. We document and explain the evolution of the speckle patterns from nearly specular at low qz to highly structured at larger qz. copyright 1997 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
56
Journal Issue
11
Journal Page Range
p. 6454-6457
ISSN
0163-1829
CODEN
PRBMDO