Published August 1983 | Version v1
Journal article Metadata-only

Study of the Semiconductor properties by irradiation, 8

Creators

  • 1. Miyazaki Univ. (Japan). Faculty of Engineering

Description

In order to know the effects of γ-ray irradiation on n-type Si-wafers, we did γ-ray irradiation experiments on n-type Si-wafers. And then we observed the trapping center by using DLTS and ICTS equipments. The trapping center level, which is produced by γ-ray, is about 0.49 eV. In addition, we describe about the recombination rate. (author)

Additional details

Additional titles

Subtitle (English)
Study of trapping center by #gamma#-ray on Si wafer

Publishing Information

Journal Title
Miyazaki Daigaku Kogakubu Kenkyu Hokoku
Journal Issue
no.29
Series
Miyazaki Daigaku Kogakubu Kenkyu Hokoku.
ISSN
0540-4932

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
15070505
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRON CAPTURE; ENERGY LEVELS; IMPURITIES; PHOTON BEAMS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE DEVICES; SILICON; TRAPPING
Descriptors DEC
BEAMS; CAPTURE; ELEMENTS; MATERIALS; MEMORY DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS