Published January 12, 2005 | Version v1
Journal article

Evaluation of photoelectric processes in photorefractive crystals via the exposure characteristics of light diffraction

  • 1. Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio avenue 9, Building 3, LT-10222 Vilnius (Lithuania)

Description

We demonstrate a novel way to analyse carrier recombination and transport processes in photorefractive semiconductors via the exposure characteristics of light induced diffraction. The results of a picosecond four-wave mixing on free carrier gratings in semi-insulating GaAs crystals at various grating periods and modulation depths of a light interference pattern are discussed. The role of a deep-trap recharging in carrier diffusion and recombination is sensitively revealed through a feedback effect of a space-charge field to non-equilibrium carrier transport

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/17/33/cm5_1_004.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
17
Journal Issue
1
Journal Page Range
p. 33-41
ISSN
0953-8984
CODEN
JCOMEL