Published September 1998 | Version v1
Journal article Metadata-only

Study of quantum optoelectronic material prepared by ion implantation

Creators

  • 1. Academia Sinica, Lanzhou (China). Inst. of Modern Physics

Description

The strong photoluminescence (PL) of Si nanocrystals originated from the quantum-confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages of its application to optoelectronic devices are reviewed and discussed

Additional details

Publishing Information

Journal Title
Nuclear Physics Review
Journal Volume
15
Journal Issue
3
Journal Page Range
p. 166-169, 174
ISSN
1007-4627

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
29057929
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
GRAIN SIZE; ION IMPLANTATION; PHOTOELECTRIC EMISSION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
CRYSTAL STRUCTURE; EFFICIENCY; ELECTRON EMISSION; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; MICROSTRUCTURE; PHOTOELECTRIC EFFECT; PHOTON EMISSION; SEMIMETALS; SIZE