Published 2005 | Version v1
Journal article Metadata-only

Carriers diffusion in GaAs/AlAs type II quantum well

Creators

  • 1. Institute of Experimental Physics, Warsaw University, Warsaw (Poland)
  • 2. Grenoble High Field Laboratory, CNRS, Grenoble (France)
  • 3. Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis (France)

Description

The micro-photoluminescence of GaAs/AlAs type II quantum well structure is presented. The specific band alignment to the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to presence of photo created carriers. (author)

Additional details

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
108
Journal Issue
5
Journal Page Range
p. 755-760
ISSN
0587-4246

Conference

Title
34. International School on Physics of Semiconducting Compounds
Dates
4-10 Jun 2005
Place
Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37057166
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; CHARGE CARRIERS; DIFFUSION LENGTH; EXCITATION; EXCITONS; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; WELLS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LENGTH; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES

Optional Information

Notes
3 refs, 8 figs