Published March 26, 2008 | Version v1
Journal article

Room-temperature preparation of ZnO nanosheets grown on Si substrates by a seed-layer assisted solution route

  • 1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

Description

A facile route to prepare two-dimensional ZnO nanosheet structures on Si substrates was developed through the adoption of a ZnO seed-layer and suitable growth medium in this work. The characterization results showed that ZnO nanosheets could be grown on Si substrates with a pre-formed ZnO seed-layer at room temperature. The ZnO nanosheets, with thickness of 20-25 nm, were interwoven into networks to form a continuous nanosheet film. Room-temperature measurements of the photoluminescence (PL) spectra and water wettability for the resulting ZnO nanosheet structures showed high intensity ratio of the UV emission to the defect emissions and good hydrophilic property without UV illumination. The present work demonstrates that the adoption of a ZnO seed-layer is an effective approach for room-temperature growth of ZnO nanosheets grown on substrates

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/19/12/125603

Additional details

Identifiers

DOI
10.1088/0957-4484/19/12/125603;
PII
S0957-4484(08)62499-X;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
19
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39108702
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; FILMS; LAYERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SHEETS; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; EMISSION; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; TEMPERATURE RANGE; ZINC COMPOUNDS