Rectifying structure with high voltage operation based on CuBO₂ as an UV photocatalyst

Highlight: • We have fabricated nanostructured CuBO₂ by spin coating on the p-Si. • CuBO₂/p-Si diode is a new rectifying structure with photosensing. • The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity. • CuBO₂/p-Si/Al diode is a candidate for producing high tension protection circuit. - Abstract: CuBO₂/p-Si diode is a new rectifying structure with photosensing, which is a candidate for producing high voltage protection circuit in electronic application. It has been seen that the photocurrent in the reverse bias I–V characteristic is strongly increased by photo-illumination. It is believed that the combination of thin CuBO₂ layer and p-Si will provide high voltage protection level, which does not exist for conventional Si diodes. The capacitance and conductance–voltage characteristics were measured at various frequencies. The results indicate that the electrical parameters of CuBO₂/p-Si diode are affected by the series resistance and interface states. The optical properties of the CuBO₂ thin film were analyzed by UV–vis–NIR spectrophotometry and FTIR studies. The optical band gap of the CuBO₂ is located in the ultraviolet (UV) range. In this spectral range, the B-O-B bonds and relationship between Cu²⁺–O are confirmed