Published February 1994
| Version v1
Journal article
Fluxon motion in one-dimensional Josephson junction arrays
- 1. Dipt. di Fisica, Univ. di Roma ''Tor Vergata'' (Italy)
- 2. Dept. of Applied Mathematics, School of Mathematical Sciences, Tel Aviv Univ., Ramat Aviv (Israel)
- 3. Inst. fuer Theoretische Physik I, Univ. Duesseldorf (Germany)
Description
Current-voltage (IV-) characteristics of linear and annular discrete arrays of underdamped small Josephson junctions with different values of single loop inductances are calculated numerically and compared with those obtained for continuum long Josephson junctions. The resonances between the moving fluxon and the linear waves caused by the array discreteness induce steps on the IV-curve which do not exist in the continuum case. The voltage position of the steps is found to be in good agreement with the kinematic approach based on the Frenkel-Kontorova model. Our results show that in Josephson fluxon devices the discreteness may lead to strong super-radiant emission of electromagnetic waves by moving fluxons. (orig.)
Additional details
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 194-196
- Journal Page Range
- p. 1765-1766.
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 20. IUPAP international conference on low temperature physics (LT-20).
- Dates
- 4-11 Aug 1993.
- Place
- Eugene, OR (United States).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 25057503
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BOUNDARY CONDITIONS; ELECTRIC CONDUCTIVITY; JOSEPHSON JUNCTIONS; NUMERICAL SOLUTION; ONE-DIMENSIONAL CALCULATIONS; POSTULATED PARTICLES; SINE-GORDON EQUATION; SUPERRADIANCE
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; EMISSION; EQUATIONS; FIELD EQUATIONS; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS