Published February 1992 | Version v1
Journal article Metadata-only

Temperature changes in reflection spectra of silicon implanted by ions in the region of 3.0-5.5. eV

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk (Belarus)

Description

The effect of the temperature and the 40Ar+ ions dose on the reflection spectra transformation is investigated. The hard reflection spectra smoothing is found to take place in implanted silicon with the temperature increase. The results obtained are interpreted on the basis of representations on the temperature-activated jump-recharging defects

Additional details

Additional titles

Original title (Russian)
Температурные изменения спектров отражения имплантированного ионами кремния в диапазоне 3,0-5,5 эв

Publishing Information

Journal Title
Zhurnal Prikladnoj Spektroskopii
Journal Volume
56
Journal Issue
2
Journal Page Range
p. 312-315.
ISSN
0514-7506
CODEN
ZPSBAX

INIS

Country of Publication
Belarus
Country of Input or Organization
Russian Federation
INIS RN
24009542
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ARGON IONS; CRYSTAL DEFECTS; CRYSTALS; ION IMPLANTATION; KEV RANGE 10-100; RADIATION DOSES; REFLECTION; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET SPECTRA
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; SEMIMETALS; SPECTRA; TEMPERATURE RANGE