Deep state in the bandgap and photoluminescence of Zn1–xMnxO
- 1. M. N. Miheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences Ekaterinburg 620108 (Russian Federation)
- 2. Ural Federal University, Ekaterinburg 620002 (Russian Federation)
- 3. Institute of Solid State Physics of the Russian Academy of Sciences Chernogolovka, Moscow District 142432 (Russian Federation)
Description
The impurity absorption in Zn1–xMnxO is formed by dipole allowed p–s transitions from deep antibonding p–d hybrid (pdh) state to the conduction band. In this paper, photoluminescence of Zn1–xMnxO single crystals was investigated in the temperature range of 7–340 K at laser excitation with the energy of 3.06 eV. Intensive photoluminescence band was observed in the energy region of 2.40–1.6 eV with the maximum at the energy of 2.17 eV. The energy of the impurity center ionization 2.35 eV was determined in this paper. The analysis of photoluminescence band form, and also close coincidence of its headline and impurity band edge allow us to interprete this band as a result of radiative dipole allowed s–p transitions from the conduction band to impurity pdh level. (author)
Additional details
Publishing Information
- Journal Title
- Fizika Nizkikh Temperatur
- Journal Volume
- 47
- Journal Issue
- 1
- Journal Page Range
- p. 38-45
- ISSN
- 0132-6414
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 52048534
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EXCITATION; LASER RADIATION; MANGANESE OXIDES; MONOCRYSTALS; PHOTOIONIZATION; PHOTOLUMINESCENCE; TEMPERATURE RANGE; ZINC COMPOUNDS
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY-LEVEL TRANSITIONS; IONIZATION; LUMINESCENCE; MANGANESE COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; TRANSITION ELEMENT COMPOUNDS