Published May 15, 2005 | Version v1
Journal article

n-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

  • 1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)
  • 2. Faculty of Chemical Technology, University of Pardubice, Cs. Legii Square 565, 532 10 Pardubice (Czech Republic)
  • 3. Joint Laboratory of Solid State Chemistry of the Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic and the University of Pardubice, Studentska 84, 532 10 Pardubice (Czech Republic)

Description

We report on the preparation and some physical properties of a quaternary system based on Bi2Se3 codoped with Sb and Pb. Single-crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient, and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. Progressive codoping of the Bi2Se3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p type. It is assumed that both Sb and Pb enter the Bi sublattice. Physical properties as well as the change in the dominant carrier type are discussed

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
97
Journal Issue
10
Journal Page Range
p. 103720-103720.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2005 American Institute of Physics