Current - Voltage (I - V) and Capacitance - Voltage (C - V) characteristics of Bi4Ti3O12 amorphous films

The BTO thin films were electrically characterised by I-V , C-V and G-V measurements. In spite of the apparently symmetric capacitor structure but current voltage (I-V) measurements showed rectifying behaviours. This results attributed to structural disordering and the interface states in the BTO capacitors and existence polarisation. Frequency response of the dielectric properties of BTO amorphous films C-V and G/w-V were measured in the frequency rage 1 khz-1 MHz. While dielectric constant(ε''') decrease with increase frequency, in 10 khz to 1 MHz frequency range, ε'''' and tanδ descries. The ideality factor n and series resistance Rs was found in room temperature 1.5 and 1030 □ respectively at forward bias I-V measurement. In addition to series resistance Rs was found 950 □ from the measured conductance in the strong accumulation region. Those observations are comparable to the others measured value for Bi4Ti3O12 films in the literature