Published September 2005
| Version v1
Miscellaneous
Temperature and frequency dependence of conductivity of GaAs layers compensated by bombardment with H+ ions
Creators
- 1. Lyublinskij tekhnicheskij univ., Lyublin (Poland)
- 2. Belaruski dzyarzhawny univ., Minsk (Belarus)
Description
The paper discusses testing of GaAs layers bombarded with H+ ions to show advantages of the application of alternating-current measurements to kinetic phenomena related with high-temperature jumping recharging in semiconductors. (authors)
Additional details
Additional titles
- Original title (Russian)
- Температурная и частотная зависимость проводимости слоев GaAs, компенсированных облучением ионами X
Publishing Information
- Imprint Place
- Minsk (Belarus)
- Imprint Title
- Proceedings of the 6. international conference 'Interaction of radiation with solids'
- Imprint Pagination
- [442 p.]
- Journal Page Range
- p. 89-91
- Report number
- INIS-BY--069
Conference
- Title
- 6. international conference 'Interaction of radiation with solids'
- Original Conference Title
- 6. mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 28-30 Sep 2005
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 36115296
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ELECTRICAL PROPERTIES; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; LAYERS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CATIONS; CHARGED PARTICLES; GALLIUM COMPOUNDS; HEAT TREATMENTS; HYDROGEN IONS; IONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS
Optional Information
- Notes
- 4 refs., 5 figs. Imprint:Materialy 6. mezhdunarodnoj konferentsii 'Vzaimodejstvie izluchenij s tverdym telom'