Published December 14, 1984
| Version v1
Journal article
Ar ion-beam etching characteristics and damage production in InP
Description
Sputtering yield characteristics of Ar ion-beam etching on InP have been determined. Damage generated by ion-beam bombardment has also been investigated by using scanning electron microscopy, photoluminescence and Auger electron spectroscopy. A two-dimensionally non-uniform surface structure which consists, in the depth direction, of a non-stoichiometric surface layer followed by a region involving nonradiative recombination centres, has been revealed from these measurements. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., D (London). Appl. Phys.
- Journal Volume
- 17
- Journal Issue
- 12
- Series
- J. Phys., D (London). Appl. Phys.
- Journal Page Range
- 2429-2437
- ISSN
- 0022-3727
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 16028155
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ARGON IONS; AUGER EFFECT; AUGER ELECTRON SPECTROSCOPY; COMPARATIVE EVALUATIONS; ELECTRON MICROSCOPY; ELECTRON SCANNING; ETCHING; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; ION BEAMS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SPUTTERING
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; DATA; ELECTRON SPECTROSCOPY; EMISSION; INDIUM COMPOUNDS; INFORMATION; IONS; LUMINESCENCE; MICROSCOPY; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS; SPECTROSCOPY