Ultra-fast growth of In nanowires on In-rich InGaN layers by focused ion beam irradiation

We grew In nanowires on In-rich InGaN layers with In content of 80% using focused ion beam system equipped with Ga liquid metal source. The experiments were performed at room temperature without any cooling or heating source, and the whole growth process can be monitored in-situby field emission scanning electron microscope / FIB dual beam system. The nanowires were observed only at the ion beam irradiation area, and the length and diameter of nanowires were controlled by adjusting accelerating voltage. The energy dispersive x-ray spectroscopy and the electron diffraction pattern of nanowires using transmission electron microscope confirmed that the composition of nanowire was indium, and the In nanowire was grown along the [-1 1 2] direction. This In nanowire induced by FIB irradiation grew with the ultra-fast growth rate as fast as 8 μ/min. The growth of In nanowires was supposed to be caused by ion irradiation-induced phase decomposition