Published May 1, 2009 | Version v1
Journal article

Investigation on the properties of molecular beam deposited ZnSe films

  • 1. Department of Electrical Engineering, National Sun Yat-Sen University, 804, Taiwan (China)
  • 2. Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

Description

Molecular beam deposition was used to deposit high quality zinc selenide (ZnSe) thin film on glass substrate at various substrate temperatures and Se/Zn beam equivalent pressure ratios. The best growth condition was identified by analyzing characteristics such as the full width at half-maximum and peak intensity of the (111) preferred orientation in X-ray diffraction patterns. The dependence of lattice constant, growth rate, film composition and optical property on a variety of growth parameters was discussed in detail to identify how the quality of ZnSe film can be improved.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2009.01.085

Additional details

Identifiers

DOI
10.1016/j.tsf.2009.01.085;
PII
S0040-6090(09)00134-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
517
Journal Issue
13
Journal Page Range
p. 3667-3671
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.