Effect of antireflection facet coatings on the characteristics of a high-power red laser diode
- 1. Korea Advanced Nano Fab Center, Suwon (Korea, Republic of)
- 2. Seoul National University of Science and Technology, Seoul (Korea, Republic of)
Description
We investigated the effect of antireflection (AR) coatings on the performance of high-power red laser diodes (LDs). The AR coating at the front facet and the high reflection (HR) coating at the rear facet were deposited on cleaved facets. As an AR coating, SiO2 or Si3N4 single layers with different thicknesses were employed. When the reflectivity of the AR coating was 25%, the best LD performance was obtained. The fitting to the threshold current density vs. effective optical length plot produced a transparent current density of 310 A/cm2. Under continuous wave (cw) operation at 15 .deg. C, the operating current was 1.41 A, and the operating voltage was 2.33 V with an optical output of 280 mW. At an operating temperature of 0 .deg. C, we observed the maximum output power of about 390 mW.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 64
- Journal Issue
- 10
- Series
- 20 refs, 5 figs
- Journal Page Range
- p. 1421-1424
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 46042788
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIREFLECTION COATINGS; CURRENT DENSITY; GOLD; JUNCTION DIODES; LASERS; NICKEL; PERFORMANCE; PLATINUM; REFLECTIVITY; TESTING; THICKNESS; TITANIUM
- Descriptors DEC
- COATINGS; DIMENSIONS; ELEMENTS; METALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PLATINUM METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE PROPERTIES; TRANSITION ELEMENTS