Exciton Binding Energies in Systems with One Marginal Potential

This job present a systematic theoretical study of exciton binding energy II-V I wide gap quantum wells based en Zn Se. It examine two different cases: a) systems with marginal valence band potential such as Zn Se/(Zn,Cd)Se/Zn Se plays the role of barrier for both electrons and holes but confinement of holes is almost negligible, b) systems with marginal potential at the conduction band such Zn S/(Zn(S,Se)/Zn S), in which the electrons are almost free. The binding energy features for all two cases are discussed. this results are in good agreement with recent experimental result