Published July 12, 2001 | Version v1
Journal article

Film growth using mass-separated ion beams

  • 1. II. Physikalisches Institut, Universitaet Goettingen, Bunsenstrasse 7-9, D-37073 Goettingen (Germany)

Description

Mass-separated low energy ion beams provide clean, well defined, and controllable deposition conditions for film growth and are thus particularly suited to study basic mechanisms of thin film growth. The recent advances and emerging applications of mass-separated ion beam deposition (MSIBD) are discussed. During the last years MSIBD has been extensively applied to study the growth of tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN) films. The nucleation and growth conditions are discussed and compared with model predictions. The microstructure and properties of F-, B- and N- containing carbon films are briefly discussed

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
576
Journal Issue
1
Journal Page Range
p. 947-950
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
16. international conference on the application of accelerators in research and industry
Acronym
CAARI 2000
Dates
1-4 Nov 2000
Place
Denton, TX (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35094343
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; BORON NITRIDES; CARBON; CRYSTAL GROWTH; CUBIC LATTICES; ION BEAMS; MICROSTRUCTURE; NUCLEATION; SURFACE COATING; TETRAGONAL LATTICES; THIN FILMS
Descriptors DEC
BEAMS; BORON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; ELEMENTS; FILMS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES

Optional Information

Notes
(c) 2001 American Institute of Physics.