Published November 15, 2006
| Version v1
Journal article
Co/CoAl/Co trilayer fabrication using spontaneous intermixing of Co and Al: Molecular dynamics simulation
- 1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
- 2. Future Technology Research Division, KIST, Cheongryang, Seoul 130-650 (Korea, Republic of)
- 3. VDRC, Department of Industrial Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Description
A multilayer structure was simulated using spontaneous intermixing of Co and Al in epitaxial Co(112-bar 0)/CoAl/Co(112-bar 0) structures. When Al atoms with 0.1eV energy were deposited on Co(112-bar 0), an Al(100) thin film was grown without any intermixing. Interestingly, during subsequent deposition of Co atoms on the grown Al(100) thin film, an intermixed layer of ordered CoAl structure was spontaneously formed and a highly oriented Co(112-bar 0) crystalline phase was grown above the intermixed region. From the calculations of nearest neighbor distributions, various compositions of CoxAl1-x structures were observed in the mixed region
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2006.08.027;
- PII
- S0921-5107(06)00476-4;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 135
- Journal Issue
- 1
- Journal Page Range
- p. 25-29
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38087089
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; COBALT ALLOYS; DEPOSITION; EPITAXY; FABRICATION; LAYERS; MOLECULAR DYNAMICS METHOD; SIMULATION; THIN FILMS
- Descriptors DEC
- ALLOYS; CALCULATION METHODS; CRYSTAL GROWTH METHODS; FILMS; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.