Published November 15, 2006 | Version v1
Journal article

Co/CoAl/Co trilayer fabrication using spontaneous intermixing of Co and Al: Molecular dynamics simulation

  • 1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  • 2. Future Technology Research Division, KIST, Cheongryang, Seoul 130-650 (Korea, Republic of)
  • 3. VDRC, Department of Industrial Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

Description

A multilayer structure was simulated using spontaneous intermixing of Co and Al in epitaxial Co(112-bar 0)/CoAl/Co(112-bar 0) structures. When Al atoms with 0.1eV energy were deposited on Co(112-bar 0), an Al(100) thin film was grown without any intermixing. Interestingly, during subsequent deposition of Co atoms on the grown Al(100) thin film, an intermixed layer of ordered CoAl structure was spontaneously formed and a highly oriented Co(112-bar 0) crystalline phase was grown above the intermixed region. From the calculations of nearest neighbor distributions, various compositions of CoxAl1-x structures were observed in the mixed region

Additional details

Identifiers

DOI
10.1016/j.mseb.2006.08.027;
PII
S0921-5107(06)00476-4;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
135
Journal Issue
1
Journal Page Range
p. 25-29
ISSN
0921-5107
CODEN
MSBTEK

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38087089
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ALLOYS; COBALT ALLOYS; DEPOSITION; EPITAXY; FABRICATION; LAYERS; MOLECULAR DYNAMICS METHOD; SIMULATION; THIN FILMS
Descriptors DEC
ALLOYS; CALCULATION METHODS; CRYSTAL GROWTH METHODS; FILMS; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.