Published September 19, 1985 | Version v1
Patent

Plasma injection device

Description

Purpose: To increase the life of a plasma injection plate for use in a thermonuclear device handling high temperature plasmas. Constitution: Materials of low atom number such as Li, Be, B and C or materials containing low atom number are embedded in a metal substrate as a plasma injection plate. The low atom number materials are diffused in and segregated on the metal substrate, by which a segregation layer of the low atom number material is formed on the outer surface of the metal substrate to cover the substrate so that the metal substrate is prevented from sputtering with the collision of particles from the plasmas. Further, even if the segregated layers of the low atom number materials are consumed by sputtering, the low atom number materials embedded in the metal substrate are always diffused in or segregated on the metal substrate, whereby the low atom number materials covering the metal substrate can be supplemented. (Kawakami, Y.)

Availability note (English)

Available from JAPIO. Also available from INPADOC.

Additional details

Publishing Information

Imprint Pagination
3 p.
IPC:
Int. Cl. G21B1/00; H05H1/22.
IPC
Int. Cl. G21B1/00; H05H1/22.
Patent number
JP patent document 60-183580/A/

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
17063889
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
BERYLLIUM; BORON; CARBON; DIVERTORS; FIRST WALL; LIFETIME; LIMITERS; LITHIUM; PLASMA; PLATES; SEGREGATION; SPUTTERING
Descriptors DEC
ALKALI METALS; ALKALINE EARTH METALS; ELEMENTS; METALS; NONMETALS; SEMIMETALS; THERMONUCLEAR REACTOR WALLS

Optional Information

Secondary number(s)
JP patent application 59-37351.