Silicon doping in irradiation reactors

CEA produces 10 % of the world production of irradiation-doped silicon in 2 research reactors (OSIRIS and ORPHEE) located in Saclay. Bars of silicon are installed in spinning irradiation devices behind neutron-absorbing screens in order to homogenize the neutron flux. In 2001 CEA provided the market with 8 tons of doped silicon, its maximal capacity was reached the year before with 11 tons. 3 Japanese (Shin-Etsu, Komatsu and Toshiba) and 1 Danish (Topsil) companies are among the customers of CEA, in 2001 CEA signed a partnership protocol with its Belgian counterpart (SCK-CEN) which disposes of irradiation facilities in Mol, according to this agreement CEA commits itself to direct its customers to SCK-CEN whenever it can not satisfy the demand and conversely for SCK-CEN. (A.C.)