Published September 2012 | Version v1
Journal article

Critical current density in thin superconducting TaN film structures

  • 1. Institut für Mikro und Nanoelektronische Systeme, Karlsruher Institut für Technologie, Hertzstr. 16, Karlsruhe 76187 (Germany)
  • 2. DLR e.V. Institut für Planetenforschung, Rutherfordstr. 2, Berlin-Adlershof 12489 (Germany)

Description

The critical current density jC in thin TaN film single-bridge structures with different width from 60 nm to 8 μm has been studied in a wide temperature range from 4.2 K up to TC ≈ 10.2 K. At T → TC, the jC(T) curves of all bridges are described by the temperature dependence of the Ginzburg-Landau de-paring critical current in a temperature range increasing with the decrease in width of the bridges. However the zero-temperature value of the critical current density jCexp(0) used as fitting parameter decreases monotonically with the decrease in width of the bridges below ≈1 μm.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physc.2011.12.014

Additional details

Identifiers

DOI
10.1016/j.physc.2011.12.014;
PII
S0921-4534(11)00537-5;

Publishing Information

Journal Title
Physica. C, Superconductivity
Journal Volume
479
Journal Page Range
p. 176-178
ISSN
0921-4534
CODEN
PHYCE6

Conference

Title
7. international conference on vortex matter in nanostructured superconductors
Acronym
VORTEX VII
Dates
10-17 Sep 2011
Place
Rhodes (Greece)

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.