Published 1983
| Version v1
Miscellaneous
Trapping and trap generation in the gate oxides of MOS devices
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- 1983 annual meeting
- Imprint Pagination
- 94 p.
- Journal Volume
- 29
- Series
- Bull. Isr. Phys. Soc.
- Journal Page Range
- p. 22.
- ISSN
- 0374-2687
- Report number
- INIS-mf--8921
Conference
- Title
- Israel Physical Society 1983 annual meeting.
- Dates
- 24 Mar 1983.
- Place
- Ramat-Gan (Israel).
INIS
- Country of Publication
- Israel
- Country of Input or Organization
- Israel
- INIS RN
- 15007539
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRONS; MOS TRANSISTORS; TRAPPED ELECTRONS; TRAPS
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- Published in summary form only.