Decay of the Cu, Ag and Au solid solution in n-Si, defectoproduction and γ-radiation

Ionization energy and cross sections of carrier capture by centers with deep levels appearing due to decay of Cu, Ag and Au solid solutions introduced by diffusion have been measured using the methods of photocapacity and isothermal capacity relaxation. It is shown that the found centres with the levels of Esub(c)-0.17-0.18, Esub(c)-0.21-0.23, Esub(c)-0.38, Esub(c)-0.46 eV are similar to those appearing after 60Co γ-quanta irradiation of n-Si without any specially introduced additions; but centres within the Esub(v)+0.35-0.45 eV energy band are similar to centres formed after thermal treatment. Appearance of the centres corresponding to Cu, Ag and Au additions in an electroactive state is not found out during the following 60Co γ-quanta irradiation of n-Si with these additions up to the dose of 2.5x108 h. Presence of Ag and Au in samples do not affect the rate of radiation centre introduction. In the samples containing Cu the rate of introduction of A-centres is lower than in the samples which do not contain specially introduced Cu