Study the photoconductivity of Bi12Ti0.80Pb0.20O20 single crystal at range temperatures (3.5-500 K)

Single crystal of mixed sillenites Bi12Ti0.80Pb0.20O20 were grown using the top seeded solution growth method. The laser light was used to study the photo-transport properties of these crystals. The measurements were made at temperature range (3.5-500 k). Electron photo-transport properties have been shown to be strongly dependent on electronegativity of ions, located in the tetrahedral positions of sillenites. It was evidenced that the illumination changed the photo-conducting properties by 4-5 orders of magnitude comparing with previously studied Bi12MeO20, where Me=Ge, Si, Ti. The maximum of transient photoconductivity observed under a laser light excitation is delayed in respect of the light pulse. It found that the temperature dependence of photoconductivity can be connected with the presence of shallow traps. An attempt to find a correlation between photo chromatic and photoconductivity effect is made (Authors)