Selective adsorption of benzoic acid species on patterned OH/Si(100) surface
Creators
- 1. Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600 (Korea, Republic of)
- 2. Division of Molecular and Life Sciences, Department of Chemistry, Center for Integrated Molecular Systems, POSTECH, Pohang, Kyungbuk 790-784 (Korea, Republic of)
- 3. Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-784 (Korea, Republic of)
- 4. Department of Physics, POSTECH, Pohang, Kyungbuk 790-784 (Korea, Republic of) and Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-984 (Korea, Republic of)
Description
It has recently been observed that benzoic acid strongly reacts with OH group on the silicon surface. Here, by defining the area in which OH group is adsorbed on the Si surface, the selective adsorption of benzoic acid species was attempted. The patterned OH/Si surface was prepared by irradiating the zeroth order beam from the bending magnet of the synchrotron facility through the gold mesh placed in front of the OH/Si sample. For discerning the selectively adsorbed molecule by x-ray photoelectron emission microscopy (X-PEEM) at N k edge, 4-nitrobenzoic acid was utilized instead of benzoic acid. Near edge x-ray absorption fine structure spectra at carbon and oxygen k edges were in good accord with the previous results obtained from the benzoic acid system. The X-PEEM images around N k edge clearly showed that the molecules adsorb only on the area in which OH groups remain
Additional details
Identifiers
- DOI
- 10.1063/1.2266035;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 100
- Journal Issue
- 4
- Journal Page Range
- p. 043510-043510.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38047051
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADSORPTION; BEAM BENDING MAGNETS; BENZOIC ACID; CARBON; EMISSION SPECTROSCOPY; GOLD; MOLECULES; OXYGEN; RADIATION EFFECTS; SILICON; SURFACES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTRA
- Descriptors DEC
- CARBOXYLIC ACIDS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; MAGNETS; METALS; MONOCARBOXYLIC ACIDS; NONMETALS; ORGANIC ACIDS; ORGANIC COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; SEMIMETALS; SORPTION; SPECTRA; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2006 American Institute of Physics