Published August 15, 2006 | Version v1
Journal article

Selective adsorption of benzoic acid species on patterned OH/Si(100) surface

  • 1. Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600 (Korea, Republic of)
  • 2. Division of Molecular and Life Sciences, Department of Chemistry, Center for Integrated Molecular Systems, POSTECH, Pohang, Kyungbuk 790-784 (Korea, Republic of)
  • 3. Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-784 (Korea, Republic of)
  • 4. Department of Physics, POSTECH, Pohang, Kyungbuk 790-784 (Korea, Republic of) and Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-984 (Korea, Republic of)

Description

It has recently been observed that benzoic acid strongly reacts with OH group on the silicon surface. Here, by defining the area in which OH group is adsorbed on the Si surface, the selective adsorption of benzoic acid species was attempted. The patterned OH/Si surface was prepared by irradiating the zeroth order beam from the bending magnet of the synchrotron facility through the gold mesh placed in front of the OH/Si sample. For discerning the selectively adsorbed molecule by x-ray photoelectron emission microscopy (X-PEEM) at N k edge, 4-nitrobenzoic acid was utilized instead of benzoic acid. Near edge x-ray absorption fine structure spectra at carbon and oxygen k edges were in good accord with the previous results obtained from the benzoic acid system. The X-PEEM images around N k edge clearly showed that the molecules adsorb only on the area in which OH groups remain

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
100
Journal Issue
4
Journal Page Range
p. 043510-043510.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2006 American Institute of Physics