Published March 2008
| Version v1
Journal article
Application of ion implantation for obtaining the nanofilms of metal silicides
- 1. Tashkent state tech. univ., Tashkent (Uzbekistan)
Description
It is determined that high dose implantation of Co ions in Si and following annealing allow one to get the epitaxial films of the CoSi2/Si (111) type. At D = 2 1016 cm-2 the discontinuous (island-like) film is formed, but at dose D≥ 5x1016 sm-2 the continuous uniform film is obtained. (authors)
Additional details
Additional titles
- Original title (Russian)
- Применение ионной имплантации для получения нанопленок силицидов металлов
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 10
- Journal Issue
- 2
- Journal Page Range
- p. 132-136
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 40030558
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; COBALT; CRYSTAL DOPING; EPITAXY; ION IMPLANTATION; LASER RADIATION; SILICON; SUPERCONDUCTING FILMS; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; RADIATIONS; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Notes
- 13 refs., 2 figs., 1 tab.