Closely packed Ge quantum dots in ITO matrix: influence of Ge crystallization on optical and electrical properties

In the present work, a method for the low-temperature production of the material consisting of closely packed Ge QDs embedded in ITO matrix is described. The films are produced by magnetron sputtering deposition followed by thermal annealing. It is shown that the conductivity and optical properties of the films depend on the structure, Ge content in the ITO matrix as well as on the annealing conditions. The conductivity of the films changes up to seven orders of magnitude in dependence on the annealing conditions, and it shows transformation from semiconductor to metallic behavior. The optical properties are also strongly affected by the preparation and annealing conditions, so both conductivity and optical properties can be controllably manipulated. In addition, the crystallization of Ge is found to occur already at 300 °C, which is significantly lower than the crystallization temperature of Ge produced by the same method in silica and alumina matrices. (paper)