Development of low energy X-ray Si-PIN detectors based on planar technology

This paper describes the processing method of low energy X-ray Si-PIN detectors manufactured by planar technology. In order to decrease the detectors' leakage current, the surface passivation technique was used and a guard ring around a detector's sensitive area was designed. The paper gives the measurement results of the leakage currents of Si-PIN detectors with 5 mm2 and 10 mm2 sensitive area respectively. The spectra of 5 mm2 Si-PIN detectors for 55Fe 5.9keV X ray are also provided at room temperature and low temperature, the detectors cooled with two stage peltiers. (authors)