Published September 27, 2013 | Version v1
Journal article Metadata-only

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

Creators

  • 1. Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)
  • 2. Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)
  • 3. Cyrium Technologies Inc., Ottawa, ON (Canada)

Description

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅1020 cm−3 was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm2. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions

Additional details

Identifiers

DOI
10.1063/1.4822197;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1556
Journal Issue
1
Journal Page Range
p. 48-52
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
9. international conference on concentrator photovoltaic systems
Acronym
CPV-9
Dates
15-17 Apr 2013
Place
Miyazaki (Japan)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45038922
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; CONCENTRATION RATIO; EPITAXY; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INTERFACES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; TUNNEL EFFECT; VARIATIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONLESS NUMBERS; DIRECT ENERGY CONVERTERS; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT

Optional Information

Notes
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