Published July 26, 1993
| Version v1
Journal article
Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures
Creators
- 1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
- 2. Lawrence Semiconductor Research Laboratories, Inc., Tempe, Arizona 85282 (United States)
Description
Epitaxial Si/praseodymium oxide/Si heterostructures were grown in situ on (111) oriented Si substrates using pulsed laser deposition. Growth of the oxide layer under oxygen deficient conditions resulted in hexagonal Pr2O3 (h-Pr2O3) films which displayed a (001)Pr2O3 parallel(111)Si, [110]Pr2O3 parallel[1 bar 10]Si orientation and x-ray rocking curve full width at half-maximum values of ∼0.8 degree. The top Si layer grew epitaxially on the oxide film with a twinned (111)Si parallel(001)Pr2O3 orientation. The surface structure of both oxide and semiconductor layers was investigated in situ using reflection high energy electron diffraction, and the resulting films were characterized using x-ray diffraction and transmission electron microscopy
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 63
- Journal Issue
- 4
- Journal Page Range
- p. 539-541.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24068949
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABLATION; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EPITAXY; HETEROJUNCTIONS; LASER RADIATION; PRASEODYMIUM OXIDES; SILICON; TRANSMISSION ELECTRON MICROSCO; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PRASEODYMIUM COMPOUNDS; RADIATIONS; RARE EARTH COMPOUNDS; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS