Published June 10, 2009 | Version v1
Journal article

Electronic structures of alkali metal (Li, Na, K, Rb, and Cs) monosilicides

  • 1. National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 5, Higashi 1-1, Tsukuba, Ibaraki 305-8565 (Japan)

Description

The electronic structures of LiSi, NaSi, RbSi, and CsSi have been calculated using a first-principle pseudopotential method to clarify the possibility of band-gap broadening of BaSi2 by alloying with alkali metals. All of them are found to be semiconductors with the calculated indirect band gaps of 1.17 eV (LiSi) and 1.24 eV (NaSi) or the calculated direct band gaps of 1.32 eV (KSi), 1.38 eV (RbSi), and 1.66 eV (CsSi). The general tendency that the gap values of these ionic semiconductors are increased as their ionicities are increased and alkali metal incorporation into BaSi2 will be hopeful to broaden its band-gap.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2008.11.149

Additional details

Identifiers

DOI
10.1016/j.jallcom.2008.11.149;
PII
S0925-8388(08)02178-6;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
478
Journal Issue
1-2
Journal Page Range
p. 754-757
ISSN
0925-8388
CODEN
JALCEU

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41044906
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BARIUM ALLOYS; CESIUM ALLOYS; ELECTRONIC STRUCTURE; EV RANGE 01-10; INTERMETALLIC COMPOUNDS; LITHIUM ALLOYS; POTASSIUM ALLOYS; RUBIDIUM BASE ALLOYS; SEMICONDUCTOR MATERIALS; SODIUM ALLOYS
Descriptors DEC
ALLOYS; ENERGY RANGE; EV RANGE; MATERIALS; RUBIDIUM ALLOYS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.