Published December 1978
| Version v1
Journal article
Annealing of surface defects of silicon carbide
Creators
- 1. Leningradskij Gosudarstvennyj Univ. (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Отжиг дефектов поверхности карбида кремния
Publishing Information
- Journal Title
- Zh. Tekh. Fiz.
- Journal Volume
- 48
- Journal Issue
- 12
- Series
- Zh. Tekh. Fiz.
- Journal Page Range
- 2586-2588
- ISSN
- 0044-4642
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 10489065
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ARGON IONS; ELECTRON BEAMS; ELECTRON DIFFRACTION; EV RANGE; HIGH TEMPERATURE; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SILICON CARBIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ENERGY RANGE; HEAT TREATMENTS; IONS; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SCATTERING; SILICON COMPOUNDS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Technical Physics (USA).