Progress in high-temperature superconducting transistors and other devices; Proceedings of the SPIE Meeting, Vol. 1394, Santa Clara, CA, Oct. 4, 5, 1990

Various papers on progress in high-temperature superconducting transistors and other devices are presented. Individual topics addressed include: superconductor/semiconductor structure and its application to superconducting devices, superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers, high-temperature superconducting Josephson junction devices, planar SNS Josephson junctions using multilayer Bi system, YBa2Cu3O7-x/Au/Nb device structures, cleaved surfaces of high Tc films for making SNS structures, high-temperature superconductive microwave technology for space applications, high-Tc superconducting infrared bolometric detector, thin film processing and device fabrication in the Tl-Ca-Ba-Cu-O system. Also discussed are: grain-oriented high--Tc superconductors and their applications, speed of optically controlled superconducting devices, effect of laser irradiation on superconducting properties of laser-deposited YBa2Cu3O7 thin films, role of buffer layers in the laser-ablated films on metallic substrates, progress toward device applications using MOCVD of TlBaCaCuO, versatility of metal organic chemical vapor deposition process for fabrication of high-quality YBCO superconducting thin films