Published February 1989 | Version v1
Journal article

Photoemission and RHEED studies of bonding properties at the CaF2 GaAs(001) interface

  • 1. Nippon Telegraph and Telephone Corp., Musashino, Tokyo (Japan). Applied Electronics Labs.

Description

Surface-sensitive analysis with synchrotron radiation photoemission spectroscopy is performed to determine the bonding properties of MBE-grown CaF2 films on GaAs(001) substrates for different substrate temperatures. Ca atoms in the unoxidized state and in the 1+ oxidation state exist at the interface at high (about 580degC substrate temperature as a result of CaF2 dissociation reaction, the RHEED pattern which appears only in the high temperature condition, is related to Ca atoms in both the unoxidized state and the 1+ oxidation state. At low (about-420degC) substrate temperature, CaF2 does not dissociate. (author)

Additional details

Publishing Information

Journal Title
Japanese Journal of Applied Physics, Part 2
Journal Volume
28
Journal Issue
2
Series
Jpn. J. Appl. Phys., Part 2.
Journal Page Range
L299-L302
ISSN
0021-4922
CODEN
JAPLD