Published February 1989
| Version v1
Journal article
Photoemission and RHEED studies of bonding properties at the CaF2 GaAs(001) interface
- 1. Nippon Telegraph and Telephone Corp., Musashino, Tokyo (Japan). Applied Electronics Labs.
Description
Surface-sensitive analysis with synchrotron radiation photoemission spectroscopy is performed to determine the bonding properties of MBE-grown CaF2 films on GaAs(001) substrates for different substrate temperatures. Ca atoms in the unoxidized state and in the 1+ oxidation state exist at the interface at high (about 580degC substrate temperature as a result of CaF2 dissociation reaction, the RHEED pattern which appears only in the high temperature condition, is related to Ca atoms in both the unoxidized state and the 1+ oxidation state. At low (about-420degC) substrate temperature, CaF2 does not dissociate. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics, Part 2
- Journal Volume
- 28
- Journal Issue
- 2
- Series
- Jpn. J. Appl. Phys., Part 2.
- Journal Page Range
- L299-L302
- ISSN
- 0021-4922
- CODEN
- JAPLD
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 20073183
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; CALCIUM FLUORIDES; ELECTRON DIFFRACTION; EPITAXY; FILMS; GALLIUM ARSENIDES; INTERFACES; KEK PHOTON FACTORY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; CALCIUM COMPOUNDS; CALCIUM HALIDES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; EMISSION; ENERGY; FLUORIDES; FLUORINE COMPOUNDS; GALLIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; RADIATION SOURCES; RADIATIONS; SCATTERING; SECONDARY EMISSION; SPECTROSCOPY; SYNCHROTRON RADIATION SOURCES