Study of electric and recombination properties of neutron irradiated silicon

Regularities of changes both electrical and recombination properties of high pure macrocrystalline silicon irradiated by neutrons within wide range of irradiation from 5·1015 up to 1·1018 cm-2, during of thermal annealing were studied. Conditions of high mobility provision and achievement of appropriate free carriers concentration of introduced phosphorous are determined. Annealing temperature dependence from both annealing duration and irradiation dose at which defects annealing is stopping is established. It was revealed, that for complete recovery of carriers live time after irradiation it is necessary the annealing temperatures higher 800 deg. C. Plasma processing influence in the hydrogen atmosphere on recombination properties of neutron irradiated silicon was studied. Technological parameters of post-radiation treatments, important for practical application of the silicon neutron doping method were defined