Published September 2011
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Influence of annealing regimes on structural and optical properties of InAs nanocrystals into ion implanted silicon
- 1. Belarusian state univ., Minsk (Belarus)
- 2. Institute of applied physical problems, Belarusian state univ., Minsk (Belarus)
- 3. Joint solid and semiconductor physics institute, National academy of sciences of Belarus, Minsk (Belarus)
- 4. Lublin univ. of technology, Lublin (Poland)
Description
Nanosized crystallites InAs have been synthesized into Si crystalline matrixes by means of the high-dose implantation of As and In ions and post-implantation annealing. RBS, TEM and low-temperature PL techniques were used in order to analyze the impurity depth distribution and evaluate the structural and optical characteristics of the implanted layers. (authors)
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Additional details
Additional titles
- Original title (Russian)
- Влияние режимов термообработки на структурные и оптические свойства нанокристаллов InAs в ионноимплантированном кремнии
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-476-939-4
- Imprint Title
- Interaction of radiation with solids. Proceedings of 9. International conference
- Imprint Pagination
- 471 p.
- Journal Page Range
- p. 300-302
- Report number
- INIS-BY--098
Conference
- Title
- 9. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 9. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 20-22 Sep 2011
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 46045186
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARSENIC IONS; CRYSTAL STRUCTURE; HEAT TREATMENTS; IMPURITIES; INDIUM ARSENIDES; INDIUM IONS; ION IMPLANTATION; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPATIAL DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DISTRIBUTION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- 3 refs., 1 tabs., 6 figs. Imprint:Vzaimodejstvie izluchenij s tverdym telom. Materialy 9. Mezhdunarodnoj konferentsii