Published April 1996
| Version v1
Journal article
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
Creators
- 1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering
Description
A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 43
- Journal Issue
- 2
- Journal Page Range
- p. 576-593.
- ISSN
- 0018-9499
- CODEN
- IETNAE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27057138
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COSMIC RADIATION; IONIZING RADIATIONS; KNOWLEDGE BASE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; SPACE FLIGHT
- Descriptors DEC
- MEMORY DEVICES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES