Pressure-induced metallization in layered ReSe₂

The evolution of the crystal structure and electrical transport properties of distorted layered transition metal dichalcogenide ReSe₂ was studied under high pressure up to ∼90 GPa by Raman spectroscopy and electrical resistivity measurements accompanied by ab initio electronic band structure calculations. Raman spectroscopy studies indicate an isostructural phase transition due to layer sliding at ∼7 GPa, to the distorted 1T-phase which remains stable up to the highest pressures employed in these experiments. From a direct band gap semiconductor at ambient pressure, ReSe₂ undergoes pressure-induced metallization at pressures ∼35 GPa, in agreement with the ab initio calculations. Resistivity measurements performed with different loading conditions reveal the possible emergence of superconductivity, which is most likely not an intrinsic property of ReSe₂, but is rather conditioned by internal stresses upon compression. (paper)