Published 1999 | Version v1
Miscellaneous Metadata-only

Metastability of the phosphorus antisite defect in LT InP

Creators

  • 1. Institute of Experimental Physics, Warsaw University, Warsaw (Poland)
  • 2. Materials Science Division, Lawrence Berkeley Laboratory, Berkeley (United States)
  • 3. Department of Electrical Engineering, University of California, San Diego (United States)

Description

no abstract available

Part of:
Abstracts of 28. International School on Physics of Semiconducting Compounds Jaszowiec'99

Additional details

Publishing Information

Publisher
Polish Academy of Sciences, Institute of Physics
Imprint Place
Warsaw (Poland)
Imprint Title
Abstracts of 28. International School on Physics of Semiconducting Compounds Jaszowiec'99
Imprint Pagination
276 p.
Journal Page Range
p. 204-206

Conference

Title
28. International School on Physics of Semiconducting Compounds Jaszowiec'99
Dates
6-11 Jun 1999
Place
Ustron-Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32006281
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; CRYSTAL DEFECTS; ENERGY LEVELS; GALLIUM COMPOUNDS; HALL EFFECT; HETEROJUNCTIONS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; PRESSURE DEPENDENCE; STABILITY; STOICHIOMETRY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K
Descriptors DEC
ARSENIC COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE

Optional Information

Contract/Grant/Project number
KBN grant no. 2 P03B 001 15
Notes
3 refs, 4 figs