Published July 2012 | Version v1
Journal article Metadata-only

Study on total dose radiation hardness of POWER VDMOSFETs

Creators

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing (China)

Description

The effect of total dose radiation on power VDMOSFETs of two different patterns has been presented The stripe cell pattern is the more promising pattern in the total dose radiation hardness of power VDMOSFETs than hexagon cell patterns. Institute of Microelectronics of Chinese Academy of Sciences has developed stripe cell power VDMOSFETs of high total dose radiation hardness ability. The products can be immune from 1400 krad(Si). (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
32
Journal Issue
7
Journal Page Range
p. 769-771
ISSN
0258-0934

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
49053846
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
MICROELECTRONICS; RADIATION DOSES; RADIATION HARDNESS; TRANSISTORS
Descriptors DEC
DOSES; SEMICONDUCTOR DEVICES

Optional Information

Notes
3 figs., 2 tabs., 5 refs.