High mobility bottom gate nanocrystalline-Si thin-film transistors

We developed high mobility bottom gate nanocrystalline (nc)-Si thin-film transistors (TFTs). nc-Si film was deposited using inductively coupled plasma chemical vapor deposition method on SiNx gate insulator. Because of good film crystallinity and low ion damage, we could get high performance TFT characteristics. Our TFT showed field effect mobility of 9.4 cm2 V-1 s-1 for electrons. These results showed that bottom gate nc-Si TFT could be used in applications such as next generation high definition television and organic light-emitting diode display.