Donor-acceptor pair formation in gallium arsenide during low-temperature gamma irradiation

The process of structure defect formation is investigated in epitaxial layers of gallium arsenide of n-type under the 60Co gamma-irradiation effect at 4.2 and 77K. It has been shown that at such irradiation donor and acceptor centers are formed with equal velocities, space distribution of which is not chaotic-average distance between the pair components is essentially less, than the average distance between pairs. The results can be explained by the assumption of the frenkel pairs formation, inter-bundle atom in one underlattice being donor, and vacancy-acceptor, in another-interbundle atom-acceptor, vacancy-donor