Electron radiation effects on surface of lead silicate glass
- 1. Texas Univ., El Paso, TX (United States). Mater. Res. Inst.
- 2. Texas Univ., El Paso, TX (United States). Dept. of Physics
- 3. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Optics and Fine Mechanics
Description
Electron radiation-induced changes in the microstructure of lead silicate glass were investigated in situ in an ultra-high vacuum (UHV) environment by X-ray photoelectron spectroscopy (XPS). Permanent metallic lead formation results from bond breaking and nucleation were observed. Bimodal distribution of the oxygen XPS signal, caused by bridging and nonbridging oxygens, was monitored during the irradiation and relaxation. The segregation of metallic lead, the depletion of oxidized lead and silicon, plus the accumulation of oxygen on sample surface under electron irradiation were observed. However, total lead, silicon and oxygen including nonbridging oxygen restored to their original concentrations after 60 hour relaxation. Only metallic lead induced by the irradiation remained constant in the structure during relaxation. (orig.)
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 239-241
- Journal Page Range
- p. 603-606.
- ISSN
- 0255-5476
- CODEN
- MSFOEP
Conference
- Title
- 13. international conference on defects in insulating materials (ICDIM-13).
- Dates
- 15-19 Jul 1996.
- Place
- Winston-Salem, NC (United States).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 28063655
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- GLASS; LEAD OXIDES; MICROSTRUCTURE; RADIATION EFFECTS; RELAXATION; SILICON OXIDES; SURFACE PROPERTIES; TIME DEPENDENCE; X-RAY SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; LEAD COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SPECTROSCOPY