Published 1996 | Version v1
Book

Materials science issues of plasma source ion implantation

  • 1. Los Alamos National Lab., NM (United States)
  • 2. General Motors Corp., Warren, MI (United States). Research and Development Center

Description

Ion beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20--100 kV) ion implantation will result. At lower voltages (50--1,200 V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-299-5
Imprint Title
Ion-solid interactions for materials modification and processing
Imprint Pagination
923 p.
Series
Materials Research Society symposium proceedings, Volume 396.
Journal Page Range
p. 455-466.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
27 Nov - 1 Dec 1995.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28048556
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAM PRODUCTION; ENERGY DEPOSITION; ION BEAMS; ION IMPLANTATION; MATERIALS; PLASMA; SYNTHESIS; TECHNOLOGY ASSESSMENT; USES
Descriptors DEC
BEAMS

Optional Information

Funding organization
USDOE, Washington, DC (United States).
Secondary number(s)
CONF-951155--.