Study of the radiative transition of donor-acceptor pairs under the resonant capture of highly excited electrons

In the present work we have made a theoretical study about the influence that highly excited electrons, in the conduction band of a semiconductor, have in radiative transitions of Donor Acceptor Pairs. We propose a model that in a first approximation describes a process of resonant capture of highly excited electrons by the donor levels, with the simultaneous emission of longitudinal-optical phonons. This mechanism has been found to be important for polar materials as Gallium Arsenide (GaAs). We explore the consequences of this process, and we find that this model predicts an enhancement of the total emission and a shift towards high energies of the position of the emission peak in the resonant capture condition. (author)