Effects of model approximations for electron, hole, and photon transport in swift heavy ion tracks
- 1. Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow Region (Russian Federation)
- 2. Laser Plasma Department, Institute of Plasma Physics, Czech Academy of Sciences, Za Slovankou 3, 182 00 Prague 8 (Czech Republic)
- 3. Department of Radiation and Chemical Physics, Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic)
- 4. National Research Nuclear University MEPhI, Kashirskoye sh., 31, 115409 Moscow (Russian Federation)
- 5. National University of Science and Technology MISiS, Leninskij pr., 4, 119049 Moscow (Russian Federation)
- 6. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskij pr., 53,119991 Moscow (Russian Federation)
- 7. National Research Centre 'Kurchatov Institute', Kurchatov Sq. 1, 123182 Moscow (Russian Federation)
Description
The event-by-event Monte Carlo code, TREKIS, was recently developed to describe excitation of the electron subsystems of solids in the nanometric vicinity of a trajectory of a nonrelativistic swift heavy ion (SHI) decelerated in the electronic stopping regime. The complex dielectric function (CDF) formalism was applied in the used cross sections to account for collective response of a matter to excitation. Using this model we investigate effects of the basic assumptions on the modeled kinetics of the electronic subsystem which ultimately determine parameters of an excited material in an SHI track. In particular, (a) effects of different momentum dependencies of the CDF on scattering of projectiles on the electron subsystem are investigated. The 'effective one-band' approximation for target electrons produces good coincidence of the calculated electron mean free paths with those obtained in experiments in metals. (b) Effects of collective response of a lattice appeared to dominate in randomization of electron motion. We study how sensitive these effects are to the target temperature. We also compare results of applications of different model forms of (quasi-) elastic cross sections in simulations of the ion track kinetics, e.g. those calculated taking into account optical phonons in the CDF form vs. Mott's atomic cross sections. (c) It is demonstrated that the kinetics of valence holes significantly affects redistribution of the excess electronic energy in the vicinity of an SHI trajectory as well as its conversion into lattice excitation in dielectrics and semiconductors. (d) It is also shown that induced transport of photons originated from radiative decay of core holes brings the excess energy faster and farther away from the track core, however, the amount of this energy is relatively small.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2016.11.002Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2016.11.002;
- arXiv
- arXiv:1611.04933v1;
- PII
- S0168-583X(16)30472-4;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 388
- Journal Page Range
- p. 41-52
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48071393
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- APPROXIMATIONS; COMPARATIVE EVALUATIONS; CROSS SECTIONS; DIELECTRIC MATERIALS; ELECTRONS; EXCITATION; HEAVY IONS; HOLES; KINETICS; MEAN FREE PATH; MONTE CARLO METHOD; NANOSTRUCTURES; PARTICLE TRACKS; PHOTON TRANSPORT; RADIATIVE DECAY; SCATTERING; SEMICONDUCTOR MATERIALS; SIMULATION; TRAJECTORIES
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; DECAY; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; EVALUATION; FERMIONS; IONS; LEPTONS; MATERIALS; NEUTRAL-PARTICLE TRANSPORT; PARTICLE DECAY; RADIATION TRANSPORT
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.