Published May 16, 2012 | Version v1
Journal article

Self-trapping of single and paired electrons in Ge2Se3

  • 1. Air Force Research Laboratory, AFRL/RVSE, Kirtland AFB, NM 87117-5776 (United States)
  • 2. Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States)
  • 3. Department of Electrical and Computer Engineering, MSC01 1100, University of New Mexico, Albuquerque, NM 87131-0001 (United States)

Description

We report the theoretical prediction of single and paired electron self-trapping in Ge2Se3. In finite atomic cluster, density functional calculations, we show that excess single electrons in Ge2Se3 are strongly localized around single germanium dimers. We also find that two electrons prefer to trap around the same germanium dimer, rupturing a neighboring Ge-Se bond. Localization is less robust in periodic, density functional calculations. While paired electron self-trapping is present, as shown by wavefunction localization around a distorted Ge-Ge dimer, single-electron trapping is not. This discrepancy appears to depend only on the boundary conditions and not on the exchange-correlation potential or basis set. For single- and paired-electron trapping, we report the adiabatic barriers to motion and we estimate hopping rates and freeze-in temperatures. For the single trapped electron, we also predict the 73Ge and 77Se hyperfine coupling constants. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/24/19/195801

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
24
Journal Issue
19
Journal Page Range
[9 p.]
ISSN
0953-8984
CODEN
JCOMEL